译：SJ/T 11864-2022 Monocrystalline Silicon Carbide Narrow Bandgap Semiconductor Substrate (Half-Insulator)

译：SJ/T 11865-2022 φ150mm n-type silicon carbide substrate for power devices

译：SJ/T 11552-2015 Using Brewster angle to measure the content of silicon interstitial oxygen using P-polarized radiation and infrared absorption spectroscopy

译：SJ/T 11502-2015

译：SJ/T 11500-2015

译：SJ/T 11497-2015 The test method for thermal stability of gallium arsenide wafers

译：SJ/T 11495-2015 Silicon interstitial oxygen conversion factor guideline

译：SJ/T 11487-2015 Non-contact method for measuring the resistivity of semi-insulating semiconductor wafers

译：SJ/T 11503-2015 The method for testing the surface roughness of a single-crystal silicon carbide polishing slice

译：SJ/T 11493-2015 The method of secondary ion mass spectrometry for measuring the nitrogen concentration in a silicon substrate

译：SJ/T 11505-2015 Ruby monocrystal polishing specification

译：SJ/T 11496-2015

译：SJ/T 11492-2015 The determination of composition of phosphorus-gallium-arsenic wafers using photoluminescence method

译：SJ/T 11504-2015 The testing method for surface quality of silicon carbide single crystal polishing wafers

译：SJ/T 11489-2015 The measurement method for the low-dislocation density indium phosphide polished surface pit density

译：SJ/T 11498-2015 The secondary ion mass spectrometry measurement method for oxygen concentration in heavily doped silicon substrate

译：SJ/T 11501-2015

译：SJ/T 11494-2015 The method for testing the photoluminescence of impurities in silicon single crystal belonging to the III-V group

译：SJ/T 11491-2015 Short-baseline infrared absorption spectroscopy method for measuring silicon interstitial oxygen content

译：SJ/T 11499-2015 The testing methods for the electrical properties of silicon carbide single crystal