GB/T 44849-2024 微机电系统（MEMS）技术 金属膜材料成形极限测量方法

ICS

31.080.99

CCS

L59

中华人民共和国国家标准

GB/T44849—2024/IEC62047﹘14:2012

微机电系统（MEMS）技术金属膜

材料成形极限测量方法

Micro-electromechanicalsystems(MEMS)technology—Forminglimit

measuringmethodofmetallicfilmmaterials

（IEC62047-14:2012,Semiconductordevices—Micro-electromechanical

devices—Part14:Forminglimitmeasuringmethodof

metallicfilmmaterials,IDT）

2024-10-26发布2025-05-01实施

国家市场监督管理总局发布

国家标准化管理委员会

GB/T44849—2024/IEC62047﹘14:2012

目次

前言

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1

范围

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2

规范性引用文件

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3

术语、定义和符号

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3.1

术语和定义

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3.2

符号

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4

试验方法

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4.1

概述

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4.2

设备

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4.3

样品

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5

试验过程与分析

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5.1

试验过程

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5.2

数据分析

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6

试验报告

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附录A（资料性）成形极限图原理

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附录B（资料性）栅格标记方法

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B.1

概述

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B.2

影印法

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B.3

喷墨法

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附录C（资料性）夹持方法

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C.1

模压法

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C.2

粘接法

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附录D（资料性）应变测量方法

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参考文献

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图1成形极限试验装置

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图2六种长宽比的矩形样品

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图3应变成形极限测量

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图4主应变和次应变成形极限图

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图A.1成形极限图

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图A.2成形极限测量用半球形冲头

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图A.3成形极限测量栅格图案

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图A.4不同长宽比样品的加载路径

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图B.1影印法标记栅格的步骤

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Ⅰ

GB/T44849—2024/IEC62047﹘14:2012

图B.2喷墨法标记栅格的步骤

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图C.1用于夹持样品的环形模具

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图C.2使用黏合剂夹持样品

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图D.1测量应变时数码相机的安装方式示意图

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图D.2变形样品的像素转换示例

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表1字母符号列表

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Ⅱ

GB/T44849—2024/IEC62047﹘14:2012

前言

本文件按照GB/T1.1—2020《标准化工作导则第1部分：标准化文件的结构和起草规则》的规

定起草。

本文件等同采用IEC62047﹘14:2012《半导体器件微机电器件第14部分：金属膜材料成形极限

测量方法》。

本文件做了下列最小限度的编辑性改动：

—为与现有标准协调，将标准名称改为《微机电系统（MEMS）技术金属膜材料成形极限测量

方法》；

—删除了“范围”中有关使用本文件的目的和意义的描述；

—增加了3.1.3、3.1.4的“注”；

—增加了资料性引用的ISO21920﹘2:2021（见4.2）；

—样品长度符号“h”修改为“l”；

—增加了图3、图D.2中d0、d1、d2的标注，删除了IEC62047﹘14:2012中图D.2的公式；

—增加了图B.2中“喷墨头”的标注，同时增加了B.3c)。

请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。

本文件由全国微机电技术标准化技术委员会（SAC/TC336）提出并归口。

本文件起草单位：合肥美的电冰箱有限公司、中机生产力促进中心有限公司、无锡华润上华科技有

限公司、苏州大学、微纳感知（合肥）技术有限公司、宁波科联电子有限公司、西北工业大学、美的集

团股份有限公司、深圳市美思先端电子有限公司、华东电子工程研究所（中国电子科技集团公司第三十八

研究所）、上海临港新片区跨境数据科技有限公司、北京晨晶电子有限公司、安徽北方微电子研究院集

团有限公司。

本文件主要起草人：曹诗亮、李根梓、马卓标、胡永刚、孙立宁、许磊、王雄伟、王学文、王春举、钱峰、

张森、武斌、张红旗、张启心、汤一、陈林、王文婧。

Ⅲ

GB/T44849—2024/IEC62047﹘14:2012

微机电系统（MEMS）技术金属膜

材料成形极限测量方法

1范围

本文件描述了测量厚度范围为0.5μm～300μm金属膜材料成形极限的方法。

本文件适用于通过压印等成型工艺制造电子元器件、MEMS的金属膜材料。

2规范性引用文件

下列文件中的内容通过文中的规范性引用而构成本文件必不可少的条款。其中，注日期的引用文

件，仅该日期对应的版本适用于本文件；不注日期的引用文件，其最新版本（包括所有的修改单）适用

于本文件。

IEC62047﹘1半导体器件微机电器件第1部分：术语和定义(Semiconductordevices—

Micro-electromechanicaldevices—Part1:Termsanddefinitions)

注：GB/T26111—2023微机电系统（MEMS）技术术语（IEC62047﹘1:2016，MOD）

3术语、定义和符号

3.1术语和定义

IEC62047﹘1界定的以及下列术语和定义适用于本文件。

3.1.1

圆形栅格circulargrid

用于测量圆内样品局部形变的栅格。

3.1.2

栅格图案gridpatterns

标记在试验材料表面的图案，用于直接测量金属膜材料的可成形性。

注：栅格由圆形和方形图案组成。

3.1.3

长轴majoraxis

连接形变后椭圆上的两个点所能获得的最长线段，穿过椭圆的两个焦点。

注：见图3中的d1。

3.1.4

短轴minoraxis

连接形变后椭圆上的两个点且垂直于长轴的最长线段。

注：见图3中的d2。

3.1.5

方形栅格squaregrid

用于测量试验材料整体形变的正方形栅格。

1