GB/T 44514-2024 微机电系统(MEMS)技术 层状MEMS材料界面黏附能四点弯曲试验方法
GB/T 44514-2024 Micro-electromechanical system(MEMS) technology—Four-point bending test method for interfacial adhesion energy of layered MEMS materials
基本信息
本文件适用于在半导体基底上沉积薄膜层的MEMS器件。薄膜层总厚度宜小于支撑基底(通常是硅晶片)厚度的1/100。
发布历史
-
2024年09月
文前页预览
研制信息
- 起草单位:
- 北京自动化控制设备研究所、合肥美的电冰箱有限公司、中机生产力促进中心有限公司、北京晨晶电子有限公司、山东中康国创先进印染技术研究院有限公司、苏州大学、西安交通大学、中国科学院空天信息创新研究院、深圳市速腾聚创科技有限公司、无锡华润上华科技有限公司、安徽奥飞声学科技有限公司、航天长征火箭技术有限公司、天津新智感知科技有限公司、华东电子工程研究所(中国电子科技集团公司第三十八研究所)、山东中科思尔科技有限公司、苏州和林微纳科技股份有限公司、明石创新(烟台)微纳传感技术研究院有限公司
- 起草人:
- 王永胜、曹诗亮、尚克军、李根梓、刘韧、汤一、毛志平、孙立宁、王志广、陈德勇、杨旸、要彦清、张鲁宇、鲁毓岚、张新伟、安志武、郑冬琛、路文一、陈得民、张红旗、商艳龙、李帆雅、钱晓晨、高峰
- 出版信息:
- 页数:16页 | 字数:14 千字 | 开本: 大16开
内容描述
ICS
31.080.99
CCS
L
59
中华人民共和国国家标准
GB/T44514—2024/IEC62047﹘31:2019
微机电系统(MEMS)技术
层状MEMS材料界面黏附能四点弯曲
试验方法
Micro-electromechanicalsystem(MEMS)technology—Four-pointbendingtest
methodforinterfacialadhesionenergyoflayeredMEMSmaterials
(IEC62047-31:2019,Semiconductordevices—Micro-electromechanical
devices—Part31:Four-pointbendingtestmethodforinterfacialadhesionenergy
oflayeredMEMSmaterials,IDT)
2024-09-29发布2024-09-29实施
国家市场监督管理总局发布
国家标准化管理委员会
GB/T44514—2024/IEC62047﹘31:2019
目次
前言
·····································································································
Ⅲ
1
范围
··································································································
1
2
规范性引用文件
······················································································
1
3
术语、定义、符号和名称
············································································
1
3.1
术语和定义
······················································································
1
3.2
符号和名称
······················································································
1
4
试验件
································································································
2
4.1
总体要求
·························································································
2
4.2
试验件的形状
····················································································
2
4.3
尺寸测量
·························································································
3
4.4
能量释放率的评价
···············································································
3
5
试验方法和试验装置
·················································································
3
5.1
试验原理
·························································································
3
5.2
试验设备
·························································································
3
5.3
试验程序
·························································································
3
5.4
试验环境
·························································································
4
6
试验报告
······························································································
4
附录A(资料性)
四点弯曲试验中的失效模式
·······················································
6
A.1
总则
·····························································································
6
A.2
失效模式
························································································
6
参考文献
··································································································
8
Ⅰ
GB/T44514—2024/IEC62047﹘31:2019
前言
本文件按照GB/T1.1—2020《标准化工作导则第1部分:标准化文件的结构和起草规则》的规
定起草。
本文件等同采用IEC62047﹘31:2019《半导体器件微机电器件第31部分:层状MEMS材料界
面结合能的四点弯曲试验方法》。
本文件做了下列最小限度的编辑性改动:
—为与现有标准协调,将标准名称改为《微机电系统(MEMS)技术层状MEMS材料界面黏附
能四点弯曲试验方法》;
—为显示试验件原始状态,增加了图1a)试验前带有预制裂纹的试验件示意图,同时增加了压辊
和支承辊的说明。
请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。
本文件由全国微机电技术标准化技术委员会(SAC/TC336)提出并归口。
本文件起草单位:北京自动化控制设备研究所、合肥美的电冰箱有限公司、中机生产力促进中心有
限公司、北京晨晶电子有限公司、山东中康国创先进印染技术研究院有限公司、苏州大学、西安交通大
学、中国科学院空天信息创新研究院、深圳市速腾聚创科技有限公司、无锡华润上华科技有限公司、安
徽奥飞声学科技有限公司、航天长征火箭技术有限公司、天津新智感知科技有限公司、华东电子工程研
究所(中国电子科技集团公司第三十八研究所)、山东中科思尔科技有限公司、苏州和林微纳科技股份
有限公司、明石创新(烟台)微纳传感技术研究院有限公司。
本文件主要起草人:王永胜、曹诗亮、尚克军、李根梓、刘韧、汤一、毛志平、孙立宁、王志广、
陈德勇、杨旸、要彦清、张鲁宇、鲁毓岚、张新伟、安志武、郑冬琛、路文一、陈得民、张红旗、
商艳龙、李帆雅、钱晓晨、高峰。
Ⅲ
GB/T44514—2024/IEC62047﹘31:2019
微机电系统(MEMS)技术
层状MEMS材料界面黏附能四点弯曲
试验方法
1范围
本文件描述了基于断裂力学概念的四点弯曲测量方法,利用作用在层状MEMS材料上的纯弯曲力
矩,以最弱界面稳态开裂的临界弯曲力矩来测量界面黏附能。
本文件适用于在半导体基底上沉积薄膜层的MEMS器件。薄膜层总厚度宜小于支撑基底(通常是硅
晶片)厚度的1/100。
2规范性引用文件
本文件没有规范性引用文件。
3术语、定义、符号和名称
3.1术语和定义
下列术语和定义适用于本文件。
3.1.1
能量释放率energyreleaserate
G
在裂纹增长过程中释放的单位表面积的应变能。
注:能量释放率被认为是裂纹驱动力,单位为焦耳每平方米(J/m2)。
3.1.2
界面黏附能interfacialadhesionenergy
Gc
当界面裂纹开始增长并沿界面稳定扩展时的能量释放率。
注:又称为临界能量释放率,其单位为焦耳每平方米(J/m2)。
3.2符号和名称
试验件的形状和符号分别如图1和表1所示。试验件的整体形状类似于三明治式悬臂梁,它应有一
个预制裂纹或一个用于萌生裂纹的缺口。裂纹萌生后,裂纹沿着层状材料体系中最弱的界面延伸。
1
推荐标准
- DB22/T 2751-2017 自驾游安全管理规范 2017-12-04
- DB31/T 392-2018 工业旅游景点服务质量要求 2018-02-12
- DB22/T 2758-2017 黑参 2017-12-04
- DB22/T 2860-2018 地理标志产品 炭泉小米 2018-01-26
- DB22/T 2750-2017 婚姻登记机关服务管理规范 2017-12-04
- DB22/T 2746-2017 朝医舍岩针法技术操作规范 2017-12-04
- DB22/T 2749-2017 最低生活保障服务管理工作规范 2017-12-04
- DB31/T 490-2018 旅游集散站服务质量要求 2018-02-12
- DB22/T 2859-2018 地理标志产品 卧龙白蘑 2018-01-26
- DB22/T 2748-2017 朝医太极针刺法操作规范 2017-12-04