译：GB/T 6590-1998 Semiconductor device-Discrete devices—Part 6:Thyristors Section Two-Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A

译：GB/T 7576-1998 Semiconductor devices—Discrete devices Part 7:Bipolar transistors Section Four—Blank detail specification for case-rated bipolar transistors for high-frequency amplification

译：GB/T 6352-1998 Semiconductor devices Discrete devices Part 6:Thyristors Section One-Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A

译：GB/T 8554-1998 Transformers and inductors for use in electronic and telecommunication equipment Measuring methods and test procedures

译：GB/T 17575-1998 Helical-scan video tape cassette system using 12.65mm magnetic tape on type VHS-Compact VHS video cassette

译：GB/T 6217-1998 Semiconductor devices-Discrete devices Part 7:Bipolar transistors Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification

译：GB/T 17576-1998 Compact disc digital audio system

译：GB/T 6351-1998 Semiconductor devices Discrete devices Part 2:Rectifier diodes Section One-Blank detail specification for rectifier diodes(including avalanche recti-fier diodes), ambient and case-rated,up to 100A

译：GB/T 6219-1998 Semiconductor devices-Discrete devices Part 8:Field-effect transistors Section One-Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz

译：GB/T 9424-1998 Semiconductor devices lntegrated circuits Part 2:Digital integrated circuits Section five-Blank detail specification for complementary MOS digital integrated circuits,series 4000B and 4000UB