GB/T 44515-2024 微机电系统(MEMS)技术 MEMS压电薄膜机电转换特性测量方法

ICS31.080.99

CCSL59

中华人民共和国国家标准

GB/T44515—2024/IEC62047⁃30:2017

微机电系统（MEMS）技术

MEMS压电薄膜机电转换特性测量方法

Micro⁃electromechanicalsystem（MEMS）technology—Measurementmethodsof

electro⁃mechanicalconversioncharacteristicsofMEMSpiezoelectricthinfilm

（IEC62047⁃30：2017，Semiconductor—Micro-electromechanicaldevices—

Part30：Measurementmethodsofelectro⁃mechanicalconversion

characteristicsofMEMSpiezoelectricthinfilm，IDT）

2024⁃09⁃29发布2025⁃01⁃01实施

国家市场监督管理总局

国家标准化管理委员会发布

GB/T44515—2024/IEC62047⁃30:2017

目次

前言··························································································································Ⅲ

1范围·······················································································································1

2规范性引用文件········································································································1

3术语和定义··············································································································1

4MEMS压电薄膜试验台······························································································1

4.1总则·················································································································1

4.2功能模块和组件··································································································3

5被测薄膜·················································································································4

5.1通则·················································································································4

5.2测量原理···········································································································4

5.3正横向压电系数的测量流程···················································································4

5.4逆横向压电系数的测量流程···················································································4

6测试报告·················································································································5

附录A（资料性）MEMS压电薄膜测量方法的示例·····························································7

A.1概述·················································································································7

A.2样品制备流程·····································································································7

A.3测量流程···········································································································7

A.4测试报告·········································································································10

A.5中性面的方程···································································································12

参考文献····················································································································13

Ⅰ

GB/T44515—2024/IEC62047⁃30:2017

前言

本文件按照GB/T1.1—2020《标准化工作导则第1部分：标准化文件的结构和起草规则》的规

定起草。

本文件等同采用IEC62047⁃30：2017《半导体器件微机电器件第30部分：MEMS压电薄膜机

电转换特性测量方法》。

本文件做了下列最小限度的编辑性改动。

——为与现有标准协调，将标准名称改为《微机电系统（MEMS）技术MEMS压电薄膜机电转换

特性测量方法》。

——增加了3.2和3.3的注释。

——对图1进行了进一步标注，使得表1的描述与图1相对应。依据中文行文中图与表述位置接

近的原则，将图1的解释说明“MEMS压电薄膜横向压电系数试验台的功能模块或组件的基

本构成见图1”调整至图1出现的位置前后，即4.1处。

6a)11c(min)c()c(max)c()

——更正了第章）中“e31,f”，改为“e31,fVin,min”，更正“e31,f”为“e31,fVin,max”。

6b)3ed31fdec31fminc()ec31

——更正了第章）中“，”，改为“e31,f”，更正“，（）”为“e31,fVin,min”，更正“，

fmaxc()

（）”为“e31,fVin,max”。

6b)4ec31f0c()

——更正了第章）中“，（）”，改为“e31,fVin,0”。

A.3.2c()c()10.0N/Vm15.0N/Vm

——更正了中“e31,fVin,0和e31,fVin,max可分别确定为和”，改为

|c()|c()|10.6N/Vm15.0N/Vm

“e31,fVin,0和|e31,fVin,max可分别确定为和”。

A.3d

——更正了表正横向压电系数计算结果“e31,f”，改为负值。

A.611c(min)c()c(max)c()

——更正了表第项中“e31,f”，改为“e31,fVin,min”，更正“e31,f”为“e31,fVin,max”。

请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。

本文件由全国微机电技术标准化技术委员会（SAC/TC336）提出并归口。

本文件起草单位：北京自动化控制设备研究所、安徽奥飞声学科技有限公司、芯联集成电路制造股

份有限公司、中机生产力促进中心有限公司、苏州大学、无锡华润上华科技有限公司、太原航空仪表有

限公司、中国航天科工飞航技术研究院、山东中康国创先进印染技术研究院有限公司、深圳市美思先

端电子有限公司、北京遥测技术研究所、西安交通大学、北京晨晶电子有限公司、上海新微技术研发中

心有限公司、天津新智感知科技有限公司、上海芯物科技有限公司、天津大学、北京大学、河北初光汽车

部件有限公司、共达电声股份有限公司、河南芯睿电子科技有限公司、广东润宇传感器股份有限公司、

华景传感科技（无锡）有限公司。

本文件主要起草人：王永胜、张红宇、安志武、李根梓、张菁华、孙立宁、苏翼、张新伟、李拉兔、

刘会聪、邢文忠、徐堃、毛志平、路文一、单伟中、许克宇、王志广、汤一、要彦清、娄亮、郑冬琛、陈得民、

姚鹏、胡晓东、卢弈鹏、袁长作、仲胜利、侯杰、陈福操、李树成、王志宏。

Ⅲ

GB/T44515—2024/IEC62047⁃30:2017

微机电系统（MEMS）技术

MEMS压电薄膜机电转换特性测量方法

1范围

本文件描述了用于压电式微传感器和微执行器等器件的压电薄膜机电转换特性测量方法。

本文件适用于MEMS工艺制备的压电薄膜。

2规范性引用文件

本文件没有规范性引用文件。

3术语和定义

下列术语和定义适用于本文件。

3.1

单压电层梁unimorphbeam

由基底上的一层压电薄膜构成的梁。

3.2

正横向压电系数directtransversepiezoelectriccoefficient

由应变或应力产生的电荷或电压，通过计算得到压电薄膜的横向压电系数。

注：用于压电薄膜时，一般表述为正等效横向压电系数。

3.3

逆横向压电系数conversetransversepiezoelectriccoefficient

由电场或电压引起的应变或应力，通过计算得到压电薄膜的横向压电系数。

注：用于压电薄膜时，一般表述为逆等效横向压电系数。

4MEMS压电薄膜试验台

4.1总则

以下横向压电特性的测量方法适用于单压电层梁。MEMS压电薄膜横向压电系数试验台的功能

模块或组件的基本构成见图1。试验台的符号和名称见表1。

1